Typical Performance
6.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 50 A
VGS = -5V/+20 V
FWD = C2M0045170P
L = 130 μH
Conditions:
IDS = 20 A
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5V/+20 V
FWD = C2M0045170P
(- - -)FWD = C3D25170H
L = 130 μH
5.0
ETotal
ETotal
4.0
3.0
2.0
1.0
0.0
EOn
EOn
ETotal
EOn
EOff
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
150
Conditions:
TJ = 25 °C
VDD = 1200 V
IDS = 50 A
VGS = -5V/+20 V
FWD = C2M0045170P
L = 130 μH
125
100
75
50
25
0
td(off)
td(on)
tf
tr
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
Figure 27. Switching Times vs. RG(ext)ꢀ
7
C2M0045170P Rev. -, 04-2018
CREE [ CREE, INC ]
