Typical Performance
125
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
100
75
50
25
0
VGS = -5 V
-30
-60
-90
-120
-150
TJ = 150 °C
VGS = 0 V
TJ = 25 °C
VGS = -2 V
TJ = -40 °C
Conditions:
TJ = -40°C
tp < 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-SourceVoltage, VGS (V)
Figure 7. Transfer Characteristic For
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-7
-6
-5
-4
-3
-2
-1
0
-7
-6
-5
-4
-3
-2
-1
0
0
0
VGS = -5 V
VGS = -5 V
-30
-60
-90
-120
-150
-30
-60
-90
VGS = 0 V
VGS = 0 V
VGS = -2 V
VGS = -2 V
-120
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
-150
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Conditons
GS =VDS
IDS = 18 mA
Conditions:
V
I
I
DS = 50 A
GS = 100 mA
20
15
10
5
VDS = 1200 V
TJ = 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
200
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristic
4
C2M0045170P Rev. -, 04-2018
CREE [ CREE, INC ]
