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C2M0045170P 参数 Datasheet PDF下载

C2M0045170P图片预览
型号: C2M0045170P
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C2M MOSFET Technology]
分类和应用:
文件页数/大小: 10 页 / 1141 K
品牌: CREE [ CREE, INC ]
 浏览型号C2M0045170P的Datasheet PDF文件第1页浏览型号C2M0045170P的Datasheet PDF文件第2页浏览型号C2M0045170P的Datasheet PDF文件第3页浏览型号C2M0045170P的Datasheet PDF文件第4页浏览型号C2M0045170P的Datasheet PDF文件第6页浏览型号C2M0045170P的Datasheet PDF文件第7页浏览型号C2M0045170P的Datasheet PDF文件第8页浏览型号C2M0045170P的Datasheet PDF文件第9页  
Typical Performance  
-6  
-5  
-4  
-3  
-2  
-1  
0
-6  
-5  
-4  
-3  
-2  
-1  
0
0
0
VGS = 0 V  
VGS = 0 V  
VGS = 5 V  
-30  
-60  
-90  
-120  
-150  
-30  
-60  
-90  
-120  
-150  
VGS = 5 V  
VGS = 10 V  
VGS = 10 V  
VGS = 15 V  
VGS = 15 V  
VGS = 20 V  
VGS = 20 V  
Conditions:  
TJ = -40 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
Drain-Source Voltage VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 13. 3rd Quadrant Characteristic at -40 ºC  
Figure 14. 3rd Quadrant Characteristic at 25 ºC  
120  
100  
80  
60  
40  
20  
0
-6  
-5  
-4  
-3  
-2  
-1  
0
0
VGS = 0 V  
-30  
-60  
-90  
-120  
-150  
VGS = 5 V  
VGS = 10 V  
VGS = 15 V  
VGS = 20 V  
Conditions:  
TJ = 150 °C  
tp < 200 µs  
0
200  
400  
600  
800  
1000  
1200  
Drain to Source Voltage, VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 15. 3rd Quadrant Characteristic at 150 ºC  
Figure 16. Output Capacitor Stored Energy  
10000  
10000  
1000  
100  
10  
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
VAC = 25 mV  
Ciss  
Ciss  
f = 1 MHz  
f = 1 MHz  
1000  
100  
10  
Coss  
Coss  
Crss  
Crss  
1
1
0
50  
100  
Drain-Source Voltage, VDS (V)  
150  
200  
0
200  
400  
600  
800  
1000  
Drain-Source Voltage, VDS (V)  
Figure 18. Capacitances vs. Drain-Source  
Figure 17. Capacitances vs. Drain-Source  
Voltageꢀ(0-1000ꢀV)  
Voltageꢀ(0-200ꢀV)  
5
C2M0045170P Rev. -, 04-2018