Electrical Characteristics: 0¡C < TA < 70¡C; 0¡C < TJ < 125¡C; 9.4V < VIN < 20V; CT = 330 pF; RT = 27k½;
unless otherwise stated.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
■ Error Amplifiers
VFB Reference Voltage
Input Bias Current
Open Loop Gain
VCOMP = VVFB
VFB = 1.275V
1.245
1.275
0.1
85
1.300
1.0
V
µA
dB
Unity Gain Bandwidth
PSRR
1.0
80
MHz
dB
f = 120Hz
COMP Source Current
COMP Sink Current
COMP Output Low Voltage
VCOMP = 3V, VVFB = 1.1V
VCOMP = 1.2V, VVFB = 1.45V
VVFB = 1.45V, ICOMP = 0.3 mA
0.9
10
1.3
16
2.0
24
mA
mA
V
0.50
0.85
1.00
■ PWM Comparators
VFFB Bias Current
VFFB = 0
2.0
100
3.3
20
µA
ns
V
Propagation Delay
VFFB rising to VGATE falling
250
Common Mode
2.9
Maximum Input Voltage
■ ENABLE Lead
ENABLE High Threshold
ENABLE Bias Current
channel 2 enabled
1.5
2.5
3.5
V
VENABLE = 0
100
250
400
µA
■ Gate Driver Outputs
Output Low Saturation Voltage
IGATE = 20 mA
IGATE = 100 mA
0.1
0.4
V
V
0.25
2.50
Output High Saturation Voltage
IGATE = 20 mA
IGATE = 100 mA
1.5
1.6
2.0
3.0
V
V
Output Voltage under Lockout
Output Rise Time
VIN = 6V, IGATE = 1 mA
no load
0.1
30
10
0.2
V
ns
ns
Output Fall Time
no load
■ Undervoltage Lockout
Turn On Threshold
7.4
6.8
8.4
7.8
9.4
8.8
V
V
Turn Off Threshold
■ Supply Current
Start Up Current
Operating Current
VIN = 6V
0.4
0.8
25
mA
mA
VCT = 0V, no load
17.5
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
