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NES1720P-140 参数 Datasheet PDF下载

NES1720P-140图片预览
型号: NES1720P-140
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-92, 4 PIN]
分类和应用: 局域网放大器晶体管
文件页数/大小: 4 页 / 38 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NES1720P-140的Datasheet PDF文件第1页浏览型号NES1720P-140的Datasheet PDF文件第2页浏览型号NES1720P-140的Datasheet PDF文件第3页  
NES1720P-140  
HALF (EACH SIDE) DEVICE OPTIMAL INPUT AND  
OUTPUT IMPEDANCES FOR CDMA  
(at VDS = 12 V and IDS = 2.15 A half of the device)  
Frequency  
(GHz)  
RIN  
(Ohm)  
XIN  
(Ohm)  
ROUT  
(Ohm)  
XOUT  
(Ohm)  
ACPR at  
885KHz(dBc)  
Z
IN  
ZOUT  
1.825  
1.840  
1.855  
1.870  
1.885  
11.8  
14.9  
11.6  
9.6  
14.0  
14.4  
3.8  
8.0  
8.9  
7.6  
6.9  
6.7  
3.3  
7.7  
-29.8  
-30.4  
-30.3  
-29.9  
-29.6  
G
G
D
D
9.5  
Ground  
Ground  
7.6  
10.3  
9.3  
12.8  
8.7  
ZIN = RIN + jXIN (Conjugate of source impedance).  
ZOUT = ROUT + jXOUT (Conjugate of load impedance).  
Z
IN  
ZOUT  
ZIN is the optimal gate-to-ground input impedance of half of the device.  
ZOUT is the optimal drain-to-ground output impedance of half of the device.  
The input circuit is optimized for input return loss and the output circuit is optimized  
for ACPR of CDMA signal.  
CDMA signal description:  
1. Four tones total and each tone has 9 channels.  
2. Optimal circuit at the worst point among the 4 tones.  
3. Chip rate: 1.228800 Mcps  
4. For half device, total output average power is set at 42 dBm (36 each tone).  
5. Peak/Average: 10 dB  
6. Signal type:  
2.5 MHz  
1.2288 MHz  
Offset: 885 KHz  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM  
03/09/2000  
DATA SUBJECT TO CHANGE WITHOUT NOTICE