NES1720P-140
TYPICAL SCATTERING PARAMETERS (FOR EACH SIDE)
VDS = 12 V, IDS = 3.0 A, ZO = 50 Ω, TF = 25˚C
FREQUENCY
(GHz)
S11
S21
S12
S22
MAG
ANG(°)
MAG
ANG(°)
MAG
ANG(°)
MAG
ANG(°)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
1.052
0.971
0.947
0.934
0.909
0.878
0.824
0.727
0.550
0.426
0.652
0.820
0.876
0.885
0.865
0.807
0.696
0.406
0.235
0.506
0.702
0.803
0.852
0.871
0.865
0.827
167.8
161.7
160.3
157.8
154.8
150.9
146.4
141.2
140.0
165.7
179.8
170.9
161.2
152.0
141.8
128.0
106.2
64.9
0.515
0.622
0.638
0.703
0.816
0.997
1.273
1.706
2.245
2.803
2.664
2.183
1.818
1.606
1.514
1.540
1.674
1.720
1.569
1.279
0.961
0.736
0.598
0.519
0.468
0.382
36.1
7.1
-4.7
0.003
0.004
0.004
0.005
0.005
0.006
0.007
0.010
0.014
0.020
0.022
0.022
0.022
0.023
0.025
0.028
0.035
0.041
0.040
0.034
0.027
0.023
0.021
0.020
0.021
0.019
20.3
-4.0
0.993
0.926
0.911
0.899
0.900
0.899
0.896
0.883
0.859
0.774
0.654
0.626
0.640
0.658
0.672
0.687
0.705
0.733
0.766
0.771
0.746
0.702
0.669
0.616
0.534
0.499
169.2
166.0
165.7
165.1
163.9
162.5
160.1
156.8
153.8
148.2
150.6
157.6
161.5
163.1
164.1
164.2
164.7
163.7
160.7
156.0
151.2
147.1
143.1
136.5
129.7
127.8
-12.5
-23.2
-34.9
-53.2
-76.6
-110.3
-151.3
158.6
109.2
71.8
-16.2
-27.7
-41.5
-58.4
-80.2
-108.4
-147.7
170.2
137.8
113.4
93.2
74.4
54.3
30.0
-2.1
-36.7
-70.1
-97.0
-118.1
-135.8
-153.7
-173.9
165.3
44.5
22.3
2.2
-15.5
-38.6
-70.0
-103.7
-133.2
-155.0
-169.4
-179.6
168.6
157.8
121.2
-35.9
-106.7
-136.2
-153.4
-165.6
-175.8
174.3
163.6
HALF (EACH SIDE) DEVICE OPTIMAL INPUT AND
OUTPUT IMPEDANCES FOR P-2dB (VDS = 12 V and IDS = 3.0 A half of the device)
Frequency
(GHz)
RIN
(Ohm)
XIN
(Ohm)
ROUT
(Ohm)
XOUT
(Ohm)
P-2dB
(dBm)
Z
IN
ZOUT
1.825
1.840
1.855
1.870
1.885
1.900
1.930
1.960
1.990
2.02
11.4
15.4
15.3
19.1
20.4
31.3
27.6
27.1
27.7
24.0
15.4
15.6
12.5
14.8
15.2
12.6
8.4
6.1
9.0
7.1
9.3
49.2
49.1
49.3
49.4
49.3
49.2
49.3
49.4
49.4
49.3
G
G
D
D
7.9
8.2
Ground
Ground
8.6
9.8
10.0
10.4
10.3
11.3
13.4
14.8
8.9
10.0
10.8
8.9
Z
IN
ZOUT
3.6
-6.7
-7.6
10.3
10.5
ZIN = RIN + jXIN (Conjugate of source impedance).
ZOUT = ROUT + jXOUT (Conjugate of load impedance).
ZIN is the optimal gate-to-ground input impedance of half of the device.
ZOUT is the optimal drain-to-ground output impedance of half of the device.
The input circuit is optimized for input return loss and tthe output circuit is
optimized for P-2dB.
CEL [ CALIFORNIA EASTERN LABS ]
