NES1720P-140
ABSOLUTE MAXIMUM RATINGS1 (TF = 25°C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
Drain to Source Voltage
Gain Compression
UNITS MIN TYP MAX
SYMBOLS
PARAMETERS
Drain-to-Source Voltage
Gate-to-Source Voltage
Gate-to-Drain Voltage
Drain Current
UNITS
RATINGS
VDS
V
dB
°C
A
12
12
3
VDS
V
19
-7
GCOMP
TCH
VGSO
VGDO
ID
V
Channel Temperature
Quiescent Drain Current1
Dissapated Power
150
V
-22
IDSQ
see note3
see note3
A
76
PDISS
RG
W
Ω
IG
Gate Current
mA
W
±440
237
Gate Resistance2
5
12.5
PT
Total Power Dissipation2
Channel Temperature
Storage Temperature
TCH
°C
°C
175
Notes:
1. VDS = 12 V, RF OFF, IDSQ = 3.0 A Each Drain.
2. RG is the series resistance for each side between the gate supply
and the FET gate.
TSTG
-65 to +175
Notes:
3. See Maximum Power Dissipation vs. Flange Temperature Curve
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. TF = 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
TYPICAL PERFORMANCE CURVES (TF = 40˚C)
NES1720P-140
T-92
OUTPUT POWER AND
SATURATED DRAIN CURRENT vs.
INPUT POWER AND FREQUENCY
P-2dB AND G-2dB vs.
FREQUENCY
12
11
10
9
53
52
51
50
49
48
47
46
45
44
43
38
35
32
29
26
23
20
17
14
11
8
53
52
51
50
49
48
P
P
P
OUT at 1.93 GHz
OUT at 1.96 GHz
OUT at 1.99 GHz
P-2dB
I
I
I
DS at 1.93 GHz
DS at 1.96 GHz
DS at 1.99 GHz
G-2dB
P
OUT
P-2dB
G-2dB
I
DS
8
V
DS = 12.0 V,
V
I
DS = 12.0 V,
DSQ = 6.0 A
I
DSQ = 6.0 A
7
1.99
32 33 34 35 36 37 38 39 40 41 42 43
1.93
1.94
1.95
1.96
1.97
1.98
Input Power and Frequency, PIN(dBm), f(GHz)
Frequency, f (GHz)
MAXIMUM POWER DISSIPATION vs.
FLANGE TEMPERATURE
INTERMODULATION DISTORTION vs.
OUTPUT POWER
250
225
200
175
150
125
100
75
-10
-20
-30
-40
-50
-60
-70
-80
V
DS = 12.0 V,
I
DSQ = 6.0 A
IMD3
IMD5
IMD
7
50
IMD
IMD
IMD
3
5
7
at 1.96GHz
at 1.96GHz
at 1.96GHz
25
0
32
37
42
47
-50
-25
0
25
50
75
100 125 150
Output Power (Each Tone), POUT (dBm)
Flange Temperature, TF (˚C)
CEL [ CALIFORNIA EASTERN LABS ]
