NE5500179A
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
QUIESCENT DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
3.0
1000
100
10
V
GS MAX = 10 V
V
DS = 4.8 V
Step = 1.0 V
2.5
2.0
1.5
1.0
0.5
1
0.1
0.0
1.5
3.0
2.5
0
2
4
6
8
10
12
14
16
1.0
2.0
Gate to Source Voltage, VGS (V)
Drain to Source Voltage, VDS (V)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
500
35
500
31
V
DS = 4.8 V
f = 1.9 GHz
IN = 20 dBm
V
I
DS = 4.8 V
DQ = 100 mA
f = 1.9 GHz
P
MAX = 30.1 dBm
P
PO = 29.8 dBm
400
300
200
400
300
30
25
30
29
P
OUT
P
OUT
I
DS
I
D
20
15
200
100
50
28
27
100
50
η
η
η
100
0
100
0
ADD
η
ADD
APC
10
0
26
0
25
0
5
10
15
20
0.0
1.0
2.0
3.0
4.0
Input Power, PIN (dBm)
Gate to Source Voltage, VGS (V)
OUTPUT POWER, DRAIN CURRENT, EFFICIENCY
AND POWER ADDED EFFICIENCY vs.
GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY AND POWER ADDED
EFFICIENCY vs. INPUT POWER
500
28
27
26
25
500
30
V
DS = 3.5 V
f = 1.9 GHz
IN = 18 dBm
V
DS = 3.5 V
P
MAX = 27.2 dBm
PO = 26.8 dBm
I
DQ = 100 mA
P
f = 1.9 GHz
400
400
300
200
25
20
P
OUT
P
OUT
300
200
I
DS
I
D
100
50
0
15
10
5
100
50
η
η
24
23
100
0
100
0
η
ADD
η
ADD
APC
0
3.0
0.0
1.0
2.0
4.0
5
0
10
15
20
25
Gate to Source Voltage, VGS (V)
Input Power, PIN (dBm)
CEL [ CALIFORNIA EASTERN LABS ]
