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NE5500179A 参数 Datasheet PDF下载

NE5500179A图片预览
型号: NE5500179A
PDF下载: 下载PDF文件 查看货源
内容描述: 4.8 V工作电压硅射频功率MOSFET用于GSM1800和GSM1900发送放大器 [4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS]
分类和应用: 放大器射频GSM
文件页数/大小: 5 页 / 43 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE5500179A  
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)  
SYMBOLS  
CHARACTERISTICS  
UNITS  
MIN  
TYP  
MAX  
TEST CONDITIONS  
f = 1.9 GHz, PIN = 0 dBm,  
VDS = 3.0 V, IDQ = 100 mA  
f = 1.9 GHz, PIN = 15 dBm,  
VDS = 3.0 V, IDQ = 100 mA  
GL  
Linear Gain  
dB  
13.0  
POUT  
IOP  
Output Power  
dBm  
mA  
%
24.5  
170  
50  
Operating Current  
Power Added Efficiency  
Linear Gain  
ηADD  
GL  
dB  
13.5  
f = 1.9 GHz, PIN = 0 dBm,  
VDS = 3.5 V, IDQ = 100 mA  
f = 1.9 GHz, PIN = 18 dBm,  
VDS = 3.5 V, IDQ = 100 mA  
POUT(1)  
IOP(1)  
ηADD  
POUT(2)  
IOP(2)  
GL  
Output Power  
dBm  
mA  
%
26.5  
210  
52  
Operating Current  
Power Added Efficiency  
Maximum Output Power  
Operating Current  
Linear Gain  
dBm  
mA  
dB  
27.0  
260  
14.0  
f = 1.9 GHz, PIN = 18 dBm  
VDS = 3.5 V, VGS = 2.5 V  
f = 1.9 GHz, PIN = 0 dBm,  
VDS = 4.8 V, IDQ = 100 mA  
f = 1.9 GHz, PIN = 20 dBm,  
VDS = 4.8 V, IDQ = 100 mA  
POUT(1)  
IOP(1)  
ηADD  
POUT(2)  
IOP(2)  
GL  
Output Power  
dBm  
mA  
%
28.5  
29.5  
300  
55  
Operating Current  
Power Added Efficiency  
Maximum Output Power  
Operating Current  
Linear Gain  
47  
dBm  
mA  
dB  
30.0  
350  
14.5  
f = 1.9 GHz, PIN = 20 dBm  
VDS = 4.8 V, VGS = 2.5 V  
f = 1.9 GHz, PIN = 0 dBm,  
VDS =6.0 V, IDQ = 100 mA  
f = 1.9 GHz, PIN = 22 dBm,  
VDS =6.0 V, IDQ = 100 mA  
POUT  
IOP  
Output Power  
dBm  
mA  
%
31.5  
380  
55  
Operating Current  
Power Added Efficiency  
ηADD  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)  
ORDERING INFORMATION1  
PART NUMBER  
QTY  
SYMBOLS  
VDS  
VGS  
ID  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current  
UNITS  
RATINGS  
V
8.5  
NE5500179A-T1  
Note:  
1. Embossed tape 12 mm wide. Gate pin faces perforation side of  
the tape.  
1 Kpcs/Reel  
V
6
0.25  
A
ID  
Drain Current (Pulse Test)2  
Input Power3  
A
0.5  
PIN  
dBm  
W
25  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
1.6  
TCH  
TSTG  
°C  
°C  
125  
-55 to +125  
Notes:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Duty Cycle 50%, TON = LMS.  
3. Frequency = 1.9 GHz, VDS = 4.8 V.  
RECOMMENDED OPERATING CONDITIONS  
SYMBOLS  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current (Pulse Test)  
Input Power  
TEST CONDITIONS  
UNITS  
V
MIN  
3.0  
0
TYP  
3.5  
2.0  
MAX  
6.0  
2.5  
0.5  
23  
VDS  
VGS  
ID  
V
Duty Cycle 50%, Ton1ms  
A
PIN  
f
Frequency = 1.9 GHz, VDS = 4.8 V  
dBm  
GHz  
˚C  
21  
22  
Operating Frequency Range  
Operating Temperature  
1.6  
-30  
2.5  
85  
TOP  
25