4.8 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 AND NE5500179A
GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 20 dBm
• HIGH POWER ADDED EFFICIENCY:
55% TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 20 dBm
• HIGH LINEAR GAIN:
14 dB TYP at V
DS
= 4.8 V, I
DQ
= 100 mA,
f = 1.9 GHz, P
IN
= 0 dBm
• SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
• SINGLE SUPPLY:
3.0 to 6.0 V
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
1.5
±
0.2
Source
Source
Gate
5.7 Max
0.6
±
0.15
Drain
0.8
±
0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.4
±
0.15
5.7 Max
0.9
±
0.2
0.2
±
0.1
0.8 Max
3.6
±
0.2
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
4.8 V GSM1800 and GSM1900 handsets. Dies are manufac-
tured using NEC's NEWMOS technology (NEC's 0.6
µm
WSi
gate lateral MOSFET) and housed in a surface mount pack-
age. This device can deliver 29.5 dBm output power with
55% power added efficiency at 1.9 GHz under the 4.8 V sup-
ply voltage, or can deliver 27 dBm output power with 50%
power added efficiency at 3.5 V by varying the gate voltage
as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• DIGITAL CORDLESS PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS
(T
A
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSS
I
DSS
V
TH
gm
R
DS(ON)
BV
DSS
CHARACTERISTICS
Gate to Source Leakage Current
Drain to Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain to Source On Resistance
Drain to Source Breakdown Voltage
= 25°C)
NE5500179A
79A
UNITS
nA
nA
V
S
-
V
MIN
-
-
1.0
-
-
20
TYP
-
-
1.35
0.41
1.00
24
MAX
100
100
2.0
-
-
-
TEST CONDITIONS
V
GSS
= 6.0 V
V
DSS
= 8.5 V
V
DS
= 4.8 V, I
DS
= 1 mA
V
DS
= 4.8 V, I
DS
1 = 150 mA, I
DS
2 = 250 mA
V
GS
= 6.0 V, V
DS
= 0.5 V
I
DSS
= 10 A
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
