5SNE 0800E330100
1500
1250
1000
750
500
250
0
1200
1000
800
600
400
200
0
VCC = 1800 V
VGE = ±15 V
RG = 2.2 ohm
Tvj = 125 °C
Ls = 100 nH
Erec
Qrr
Qrr
Irr
Erec
Irr
VCC = 1800 V
IF = 800 A
Tvj = 125 °C
Ls = 100 nH
Erec [mJ] = -600 x 10-6 x IF2 + 1.72 x IF + 190
0
1
2
3
4
0
400
800
IF [A]
1200
1600
di/dt [kA/µs]
Fig. 12 Typical reverse recovery characteristics
Fig. 13 Typical reverse recovery characteristics
vs forward current
vs di/dt
1600
1400
2000
VCC £ 2500 V
di/dt 5000 A/µs
£
Tvj = 125 °C
1600
1200
800
400
0
25°C
1200
125°C
1000
800
600
400
200
0
0
1
2
3
4
0
500 1000 1500 2000 2500 3000 3500
VR [V]
VF [V]
Fig. 14 Typical diode forward characteristics,
Fig. 15 Safe operating area diode (SOA)
chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 8 of 9
ABB [ THE ABB GROUP ]
