5SNE 0800E330100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VCC = 1800 V
VGE = ±15 V
RG = 2.2 ohm
Tvj = 125 °C
Ls = 100 nH
VCC = 1800 V
IC = 800 A
Eon
Eon
VGE = ±15 V
Tvj = 125 °C
Ls = 100 nH
Eoff
Eoff
Esw [J] = 1.03 x 10-6 x IC2 + 1.86 x 10-3 x IC + 419 x 10-3
0
5
10
15
20
25
0
400
800
1200
1600
RG [ohm]
IC [A]
Fig. 5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
VCC = 1800 V
IC = 800 A
td(off)
VGE = ±15 V
Tvj = 125 °C
Ls = 100 nH
td(off)
tf
td(on)
1
tr
1
td(on)
tf
0.1
tr
VCC = 1800 V
RG = 2.2 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 100 nH
0.1
0.01
0
5
10
15
20
25
0
400
800
1200
1600
RG [ohm]
IC [A]
Fig. 7
Typical switching times
vs collector current
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 6 of 9
ABB [ THE ABB GROUP ]
