5SNE 0800E330100
3)
IGBT characteristic values
Parameter
Symbol Conditions
min typ max Unit
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C
3300
V
4)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.7
3.5
3.1
3.8
3.4
4.3
8
V
V
Collector-emitter
saturation voltage
VCE sat
IC = 800 A, VGE = 15 V
VCE = 3300 V, VGE = 0 V
mA
mA
nA
V
Collector cut-off current
ICES
80
Gate leakage current
IGES
-500
5.5
500
7.5
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
Gate-emitter threshold voltage
VGE(TO)
IC = 160 mA, VCE = VGE, Tvj = 25 °C
IC = 800 A, VCE = 1800 V,
VGE = -15 V .. 15 V
Gate charge
Qge
8.07
µC
Input capacitance
Cies
Coes
Cres
125
7.71
1.48
525
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
nF
Output capacitance
Reverse transfer capacitance
VCC = 1800 V,
IC = 800 A,
RG = 2.2 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Turn-on delay time
Rise time
td(on)
ns
ns
ns
ns
525
190
tr
Ls = 100 nH, inductive load Tvj = 125 °C
200
VCC = 1800 V,
IC = 800 A,
RG = 2.2 W,
VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
1060
1210
340
Turn-off delay time
Fall time
td(off)
tf
Ls = 100 nH, inductive load Tvj = 125 °C
460
VCC = 1800 V, IC = 800 A,
VGE = ±15 V, RG = 2.2 W,
Ls = 100 nH, inductive load
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
1000
1380
880
Turn-on switching energy
Turn-off switching energy
Eon
Eoff
mJ
mJ
VCC = 1800 V, IC = 800 A,
VGE = ±15 V, RG = 2.2 W,
Ls = 100 nH, inductive load
1250
t
psc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
Short circuit current
ISC
3300
A
VCC = 2500 V, VCEM CHIP ≤ 3300 V
Module stray inductance
Ls CE
Leg 1 + 2 parallel
15
nH
TC = 25 °C
TC = 125 °C
0.09
0.13
Resistance, terminal-chip
RCC’+EE’ Leg 1 + 2 parallel
mΩ
3)
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
4)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 2 of 9
ABB [ THE ABB GROUP ]
