5SNE 0800E330100
1000
100
10
20
15
10
5
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
Cies
VCC = 1800 V
VCC = 2500 V
Coes
Cres
IC = 800 A
Tvj = 25 °C
0
1
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
Qg [µC]
VCE [V]
Fig. 9
Typical capacitances
vs collector-emitter voltage
Fig. 10 Typical gate charge characteristics
2.5
2
VCC 2500 V, Tvj = 125 °C
£
VGE = ±15 V, RG = 2.2 ohm
1.5
1
0.5
0
Chip
Module
0
500
1000 1500 2000 2500
VCE [V]
3000 3500
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 7 of 9