5SNA 1200E330100
0.1
Analytical function for transient thermal
impedance:
n
Zth(j-c) Diode
0.01
Z (t) = R (1-e-t/ti )
å
th (j-c)
i
Zth(j-c) IGBT
i=1
i
1
2
3
4
5
Ri(K/kW) 5.854 1.375 0.641 0.632
207.4 30.1 7.55 1.57
0.001
ti(ms)
Ri(K/kW) 11.54 2.887 1.229 1.295
203.6 30.1 7.53 1.57
ti(ms)
0.0001
0.001
0.01
0.1
1
10
t [s]
Fig. 16 Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1556-03 May 05
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