5SNA 1200E330100
5)
Diode characteristic values
Parameter
Symbol Conditions
min typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
2.0
2.3
2.6
6)
Forward voltage
VF
Irr
IF = 1200 A
V
A
2.0 2.35 2.6
1100
1350
715
Reverse recovery current
Recovered charge
VCC = 1800 V,
IF = 1200 A,
VGE = ±15 V,
RG = 1.5 W
Ls = 100 nH
inductive load
Qrr
trr
µC
ns
mJ
1280
520
Reverse recovery time
Reverse recovery energy
1450
840
Erec
1530
5)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
6)
7)
Thermal properties
Parameter
Symbol Conditions
min typ max Unit
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.0085 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.017 K/W
2)
Thermal resistance case
to heatsink
Rth(c-s)
per module, l grease = 1W/m x K
0.006
K/W
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
7)
Mechanical properties
Parameter
Symbol Conditions
min typ max Unit
L x W x H
190 x 140 x 38
Dimensions
Typical , see outline drawing
mm
Term. to base: 23
Term. to term: 19
Term. to base: 33
Term. to term: 32
according to IEC 60664-1
and EN 50124-1
Clearance distance in air
da
mm
according to IEC 60664-1
and EN 50124-1
Surface creepage distance
Mass
ds
m
mm
g
1380
7)
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 3 of 9
ABB [ THE ABB GROUP ]
