5SNA 1200E330100
2000
1800
1600
1400
1200
1000
800
1800
1600
1400
1200
1000
800
600
400
200
0
VCC = 1800 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 100 nH
VCC = 1800 V
IF = 1200 A
Tvj = 125 °C
Ls = 100 nH
Erec
Qrr
Irr
Qrr
Erec
600
Irr
400
200
Erec [mJ] = -3.45 x 10-4 x IF + 1.45 x IF + 285
2
0
0
500
1000
1500
IF [A]
2000
2500
3000
0
1
2
3
4
5
6
7
di/dt [kA/µs]
Fig. 12 Typical reverse recovery characteristics
Fig. 13 Typical reverse recovery characteristics
vs forward current
vs di/dt
2400
2800
VCC £ 2500 V
di/dt 8000 A/µs
Tvj = 125 °C
£
2400
2000
1600
1200
800
400
0
2000
25°C
125°C
1600
1200
800
400
0
0
500 1000 1500 2000 2500 3000 3500
VR [V]
0
1
2
3
4
VF [V]
Fig. 14 Typical diode forward characteristics,
Fig. 15 Safe operating area diode (SOA)
chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 8 of 9
ABB [ THE ABB GROUP ]
