5SNA 1200E330100
1000
100
10
20
15
10
5
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
VCC = 1800 V
Cies
VCC = 2500 V
Coes
Cres
IC = 1200 A
Tvj = 25 °C
0
1
0
1
2
3
4
5
6
7
8
9
10 11 12
0
5
10
15
20
25
30
35
VCE [V]
Qg [µC]
Fig. 9
Typical capacitances
Fig. 10 Typical gate charge characteristics
vs collector-emitter voltage
2.5
2
VCC £ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.5 ohm
1.5
1
0.5
0
Chip
Module
0
500
1000 1500 2000 2500 3000 3500
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 7 of 9
ABB [ THE ABB GROUP ]
