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HY29F800BT-70E 参数 Datasheet PDF下载

HY29F800BT-70E图片预览
型号: HY29F800BT-70E
PDF下载: 下载PDF文件 查看货源
内容描述: X8 / X16闪存EEPROM [x8/x16 Flash EEPROM ]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 40 页 / 311 K
品牌: ETC [ ETC ]
 浏览型号HY29F800BT-70E的Datasheet PDF文件第30页浏览型号HY29F800BT-70E的Datasheet PDF文件第31页浏览型号HY29F800BT-70E的Datasheet PDF文件第32页浏览型号HY29F800BT-70E的Datasheet PDF文件第33页浏览型号HY29F800BT-70E的Datasheet PDF文件第35页浏览型号HY29F800BT-70E的Datasheet PDF文件第36页浏览型号HY29F800BT-70E的Datasheet PDF文件第37页浏览型号HY29F800BT-70E的Datasheet PDF文件第38页  
HY29F800  
AC CHARACTERISTICS  
Alternate CE# Controlled Erase/Program Operations  
Parameter  
Speed Option  
- 55 - 70 - 90 - 12  
Description  
Unit  
JEDEC  
tAVAV  
Std  
tWC Write Cycle Time 1  
Min 55  
Min  
70  
90  
120  
ns  
ns  
tAVEL  
tAS  
Address Setup Time  
0
tELAX  
tAH Address Hold Time  
tDS Data Setup Time  
Min 45  
Min 25  
Min  
45  
30  
45  
45  
50  
50  
ns  
tDVEH  
tEHDX  
tGHEL  
tWLEL  
tEHWH  
tELEH  
tEHEL  
ns  
tDH Data Hold Time  
0
0
0
0
ns  
tGHEL Read Recovery Time Before Write  
tWS WE# Setup Time  
Min  
ns  
Min  
ns  
tWH WE# Hold Time  
Min  
ns  
tCP CE# Pulse Width  
Min 30  
Min  
35  
45  
50  
ns  
tCPH CE# Pulse Width High  
20  
7
ns  
Typ  
µs  
Byte Mode  
Max  
300  
12  
µs  
tWHWH1 tWHWH1 Programming Operation 1, 2, 3  
Typ  
µs  
Word  
Mode  
Max  
500  
7.2  
21.6  
6.3  
18.6  
1
µs  
Typ  
sec  
sec  
sec  
sec  
sec  
sec  
sec  
sec  
cycles  
cycles  
ns  
Byte Mode  
Max  
Chip Programming Operation 1, 2, 3, 5  
Typ  
Word  
Mode  
Max  
Typ  
tWHWH2 tWHWH2 Sector Erase Operation 1, 2, 4  
tWHWH3 tWHWH3 Chip Erase Operation 1, 2, 4  
Max  
8
Typ  
19  
Max  
150  
Typ  
1,000,000  
100,000  
Erase and Program Cycle Endurance  
tBUSY CE# to RY/BY# Delay  
Min  
Min 30  
30  
35  
50  
Notes:  
1. Not 100% tested.  
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 5.0 volts, 100,000 cycles. In addition,  
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-  
tions of 90 °C, VCC = 4.5 volts (4.75 volts for 55 ns version), 100,000 cycles.  
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program  
command. See Table 5 for further information on command sequences.  
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes  
are programmed to 0x00 before erasure.  
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most  
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum  
byte program time specified is exceeded. See Write Operation Status section for additional information.  
Rev. 4.0/Jan. 00  
34  
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