BSP75G
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T
A
=25°C
Continuous drain current @ V
IN
=10V; T
A
=25°C
Continuous drain current @ V
IN
=5V; T
A
=25°C
Pulsed drain current @ V
IN
=10V
Continuous source current (body diode)
Pulsed source current (body diode)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
I
D
I
D
I
DM
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
1.6
1.4
5
3
5
550
80
4000
E
40/150/56
Unit
V
V
V
V
°C
°C
W
A
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Symbol
R
JA
R
JA
R
JA
Limit
50
24
208
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
