BSP75G
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Off-state drain current
Off-state drain current
Input threshold voltage
(*)
Input current
Input current
Input current
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
(†)
Current limit
(†)
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
Turn-off time (V
IN
to 90% I
D
)
Slew rate on (70 to 50% V
DD
)
Slew rate off (50 to 70% V
DD
)
Protection functions
(‡)
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy Tj=25°C
Unclamped single pulse
inductive energy Tj=150°C
Inverse diode
Source drain voltage
Symbol
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
R
DS(on)
I
D(LIM)
I
D(LIM)
t
on
t
off
-dV
DS
/dt
on
Min.
60
Typ.
70
0.1
3
Max.
75
3
15
Unit
V
A
A
V
Conditions
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=+5V, I
D
=0.7A
V
IN
=+10V, I
D
=0.7A
V
IN
=+5V, V
DS
>5V
V
IN
=+10V, V
DS
>5V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
1
2.1
0.7
1.5
4
520
385
1.2
2.7
7
675
550
1.75
4
10
20
20
10
mA
mA
mA
m
m
A
A
s
s
V/ s
V/ s
0.7
2
1.1
3
2.2
13
10
3.2
dV
DS
/dt
off
V
PROT
T
JT
4.5
150
175
10
V
°C
°C
mJ
mJ
I
D(ISO)
=0.7A, V
DD
=32V
I
D(ISO)
=0.7A, V
DD
=32V
E
AS
E
AS
550
200
V
SD
1
V
IN
=0V, -I
D
=1.4A
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
(†) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
© Zetex Semiconductors plc 2006