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MT8888C 参数 Datasheet PDF下载

MT8888C图片预览
型号: MT8888C
PDF下载: 下载PDF文件 查看货源
内容描述: 集成双音多频收发器与英特尔微型接口 [Integrated DTMF Transceiver with Intel Micro Interface]
分类和应用:
文件页数/大小: 25 页 / 537 K
品牌: ZARLINK [ ZARLINK SEMICONDUCTOR INC ]
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MT8888C  
Data Sheet  
DC Electrical Characteristics (continued) - - VSS=0 V. (continued)  
Characteristics  
Source current  
Sym.  
Min.  
Typ.Max. Units  
Test Conditions  
VOH=4.6V  
ESt  
and  
St/Gt  
17  
18  
IOH  
IOL  
-0.5  
2
-3.0  
4
mA  
mA  
Sink current  
Sink current  
VOL=0.4V  
VOL=0.4V  
19  
IOL  
4
16  
mA  
IRQ/  
CP  
† Characteristics are over recommended operating conditions unless otherwise stated.  
‡ Typical figures are at 25 °C, VDD =5V and for design aid only: not guaranteed and not subject to production testing.  
* See “Notes” following AC Electrical Characteristics Tables.  
Electrical Characteristics Gain Setting Amplifier - Voltages are with respect to ground (VSS) unless otherwise stated,  
VSS= 0V.  
Characteristics  
Sym.  
Min.  
Typ.  
Max.  
Units  
Test Conditions  
1
2
3
4
5
6
7
8
Input leakage current  
Input resistance  
IIN  
RIN  
100  
nA  
MΩ  
mV  
dB  
V
SS VIN VDD  
10  
Input offset voltage  
VOS  
25  
Power supply rejection  
Common mode rejection  
DC open loop voltage gain  
Unity gain bandwidth  
Output voltage swing  
PSRR  
CMRR  
AVOL  
BW  
50  
40  
1 kHz  
dB  
40  
dB  
CL = 20p  
CL = 20p  
1.0  
0.5  
MHz  
V
VO  
VDD-0.5  
100  
RL 100 kto VSS  
9
Allowable capacitive load (GS)  
CL  
RL  
pF  
kΩ  
V
PM>40°  
VO = 4Vpp  
RL = 50kΩ  
10 Allowable resistive load (GS)  
11 Common mode range  
50  
VCM  
1.0  
VDD-1.0  
Figures are for design aid only: not guaranteed and not subject to production testing.  
Characteristics are over recommended operating conditions unless otherwise stated.  
MT8888C AC Electrical Characteristics - Voltages are with respect to ground (VSS) unless otherwise stated.  
Characteristics  
Sym.  
Min.  
Typ.Max.  
Units  
Notes*  
1,2,3,5,6  
1,2,3,5,6  
Valid input signal levels  
(each tone of composite  
signal)  
-29  
+1  
dBm  
R
X
1
27.5  
869  
mVRMS  
† Characteristics are over recommended operating conditions (unless otherwise stated) using the test circuit shown in Figure 15.  
18  
Zarlink Semiconductor Inc.  
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