US2305
12
10000
Unitpoower
f=1.0MHz
1000
I
D
= -4.2A
10
-V
GS
, Gate to Source Voltage (V)
V
DS
= -16V
8
65mΩ
Ciss
6
C (pF)
Coss
100
4
Crss
2
0
0
5
10
15
20
25
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
1ms
-I
D
(A)
1
0.05
P
DM
t
0.01
10ms
100ms
0.1
T
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
℃
0.01
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
R
D
V
DS
D
TO THE
OSCILLOSCOPE
0.8 x RATED V
DS
D
V
DS
TO THE
OSCILLOSCOPE
0.75 x RATED V
DS
G
S
V
GS
R
G
G
S
-10 V
V
GS
-1~-3mA
I
G
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
