US2305
Unitpoower
Parameter
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-4.2A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.0A
Min.
-20
-
-
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Max. Units
-
-
53
65
100
250
-
-
-1
-10
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
-
-
-
-
-
9
-
-
-
10.6
2.32
3.68
5.9
3.6
32.4
2.6
740
167
126
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2.8A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
= ± 12V
I
D
=-4.2A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-4.2A
R
G
=6Ω,V
GS
=-10V
R
D
=3.6Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
trr
Qrr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=-4.2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
27.7
22
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
