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US2305 参数 Datasheet PDF下载

US2305图片预览
型号: US2305
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 4 页 / 249 K
品牌: XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
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US2305
Unitpoower
P-Channel Enhancement Mode MOSFET
BV
DSS
D
Simple Drive Requirement
Small Package Outline
Surface Mount Device
S
SOT-23
G
-20V
65mΩ
- 4.2A
R
DS(ON)
I
D
D
G
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Rating
- 20
± 12
-4.2
-3.4
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice