UD0002U
Ver 1.0
600
20.0
I
D
=5A
Is, Source-drain current(A)
500
400
125 C
125 C
10.0
R
DS(on)
(m
Ω
)
300
75 C
200
25 C
100
0
5.0
25 C
75 C
0
2
4
6
8
10
1.0
0
0.25
0.50
0.75
1.00
1.25
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
420
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
V
DS
=50V
I
D
=5A
350
C, Capacitance(pF)
Ciss
280
210
140
Coss
70
Crss
0
0
5
10 15 20 25
30 35 40 45 50
V
GS
, Gate to Source Voltage(V)
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
80
I
D
, Drain Current(A)
TD(off )
Switching Time(ns)
10
Tf
Tr
TD(on)
10
R
DS
)
(O N
L im
it
1m
10
DC
m
s
s
10
0u
s
1
1
VDS=50V,ID=1A
VGS=10V
0.1
1
10
100
0.1
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,02,2010
4
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
