UD0002U
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=80V , V
GS
=0V
Min
100
Typ
Max
Units
V
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= ±20V , V
DS
=0V
1
±100
uA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=5A
V
DS
=20V , I
D
=5A
1
1.8
170
5.5
3
213
V
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=25V,V
GS
=0V
f=1.0MHz
310
35
20
8
9
16.5
3.5
5.5
1
2
pF
pF
pF
V
DD
=50V
I
D
=1A
V
GS
=10V
R
GEN
= 6 ohm
V
DS
=50V,I
D
=5A,V
GS
=10V
V
DS
=50V,I
D
=5A,
V
GS
=10V
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
SD
Diode Forward Voltage
V
GS
=0V,I
S
=1A
0.785
1.3
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 50V.(See Figure13)
Sep,02,2010
2
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
