UD0002U
Ver 1.0
10
V
GS
=10V
V
GS
=6V
10
I
D
, Drain Current(A)
6
V
GS
=5V
I
D
, Drain Current(A)
8
8
6
Tj=125 C
4
25 C
2
-55 C
4
V
GS
=4V
2
V
GS
=3V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
1.2
2.4
3.6
4.8
6.0
7.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
360
Figure 2. Transfer Characteristics
2.5
R
DS(on)
, On-Resistance
Normalized
300
240
V
G S
=10V
180
120
60
1
1
2
4
6
8
10
2.2
1.9
1.6
1.3
1.0
0
V
G S
=10V
I
D
=5A
R
DS(on)
(m
Ω
)
0
25
50
75
100
125
I
D
, Drain Current(A)
150
T j (
°C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,02,2010
3
XINDEYI [ ShenZhen XinDeYi Electronics Co., Ltd. ]
