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5962-9951401QXX 参数 Datasheet PDF下载

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型号: 5962-9951401QXX
PDF下载: 下载PDF文件 查看货源
内容描述: [Configuration Memory]
分类和应用: 内存集成电路
文件页数/大小: 10 页 / 92 K
品牌: XILINX [ XILINX, INC ]
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R
QPRO Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR)  
Standby Mode  
Programming  
The PROM enters a low-power standby mode whenever CE  
is asserted High. The output remains in a high-impedance  
state regardless of the state of the OE input.  
The devices can be programmed on programmers supplied  
by Xilinx or qualified third-party vendors. The user must  
ensure that the appropriate programming algorithm and the  
latest version of the programmer software are used. The  
wrong choice can permanently damage the device.  
Table 1: Truth Table for Control Inputs  
Control Inputs  
Outputs  
RESET  
CE  
Internal Address  
DATA  
CEO  
I
CC  
(1)  
Inactive  
Low  
If address < TC : increment  
Active  
High-Z  
High  
Low  
Active  
Reduced  
(1)  
If address > TC : dont change  
Active  
Inactive  
Active  
Low  
High  
High  
Held reset  
Not changing  
Held reset  
High-Z  
High-Z  
High-Z  
High  
High  
High  
Active  
Standby  
Standby  
Notes:  
1. The XC1700 RESET input has programmable polarity  
1. TC = Terminal Count = highest address value. TC + 1 = address 0.  
Radiation Characteristics (XQR1701L only)  
Symbol  
TID  
Description  
Min  
Max  
Units  
Total ionizing dose, Method 1019  
50K  
rads(Si)  
2
SEL  
Single event latch-up.  
0
0
(cm /Device)  
2
Heavy ion saturation cross section, LET > 120 MeV cm /mg  
1
2
SEU  
Single event bit upset.  
(cm /Bit)  
Heavy ion saturation cross section  
2
LET > 120 MeV cm /mg  
-5  
2
SEFI  
Single event functional interupt,  
1.2e  
(cm /Device)  
2
Heavy ion saturation cross section,  
10% saturated intercept at LET = 6.0 MeV cm /mg  
2
Notes:  
2
1. Single Event Effects testing was performed with heavy ion to a maximum LET of 120 MeV-cm /mg.  
6
www.xilinx.com  
DS062 (v3.0) February 8, 2000  
1-800-255-7778  
Preliminary Product Specification  
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