R
QPRO Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR)
Standby Mode
Programming
The PROM enters a low-power standby mode whenever CE
is asserted High. The output remains in a high-impedance
state regardless of the state of the OE input.
The devices can be programmed on programmers supplied
by Xilinx or qualified third-party vendors. The user must
ensure that the appropriate programming algorithm and the
latest version of the programmer software are used. The
wrong choice can permanently damage the device.
Table 1: Truth Table for Control Inputs
Control Inputs
Outputs
RESET
CE
Internal Address
DATA
CEO
I
CC
(1)
Inactive
Low
If address < TC : increment
Active
High-Z
High
Low
Active
Reduced
(1)
If address > TC : don’t change
Active
Inactive
Active
Low
High
High
Held reset
Not changing
Held reset
High-Z
High-Z
High-Z
High
High
High
Active
Standby
Standby
Notes:
1. The XC1700 RESET input has programmable polarity
1. TC = Terminal Count = highest address value. TC + 1 = address 0.
Radiation Characteristics (XQR1701L only)
Symbol
TID
Description
Min
Max
Units
Total ionizing dose, Method 1019
50K
rads(Si)
2
SEL
Single event latch-up.
0
0
(cm /Device)
2
Heavy ion saturation cross section, LET > 120 MeV cm /mg
1
2
SEU
Single event bit upset.
(cm /Bit)
Heavy ion saturation cross section
2
LET > 120 MeV cm /mg
-5
2
SEFI
Single event functional interupt,
1.2e
(cm /Device)
2
Heavy ion saturation cross section,
10% saturated intercept at LET = 6.0 MeV cm /mg
2
Notes:
2
1. Single Event Effects testing was performed with heavy ion to a maximum LET of 120 MeV-cm /mg.
6
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DS062 (v3.0) February 8, 2000
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Preliminary Product Specification