Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0
10
Bottom: 5.0 V
100
150oC
25oC
-1
10
-55oC
※Notes :
※Notes :
1. 250µ s Pulse Test
2. TC = 25℃
1. VDS = 40V
2. 250µ s Pulse Test
-1
10
-2
10
-1
100
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
18
15
12
9
VGS = 10V
VGS = 20V
100
6
150℃
25℃
※Notes :
1. VGS = 0V
3
2. 250µ s Pulse Test
※Note : T = 25℃
J
-1
0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
600
400
200
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 120V
VDS = 300V
C
iss
VDS = 480V
6
C
oss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
2
rss
※ Note : ID = 2.0 A
0
-1
10
100
101
0
2
4
6
8
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics