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WFF2N60 参数 Datasheet PDF下载

WFF2N60图片预览
型号: WFF2N60
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 7 页 / 715 K
品牌: WISDOM [ WISDOM TECHNOLOGIES INT`L ]
 浏览型号WFF2N60的Datasheet PDF文件第1页浏览型号WFF2N60的Datasheet PDF文件第3页浏览型号WFF2N60的Datasheet PDF文件第4页浏览型号WFF2N60的Datasheet PDF文件第5页浏览型号WFF2N60的Datasheet PDF文件第6页浏览型号WFF2N60的Datasheet PDF文件第7页  
WFF2N60  
Electrical Characteristics ( TC = 25 °C unless otherwise noted )  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
VGS = 0V, ID = 250uA  
ID = 250uA, referenced to 25 °C  
Drain-Source Breakdown Voltage  
600  
-
-
-
-
V
Δ BVDSS  
/
Breakdown Voltage Temperature  
coefficient  
0.6  
V/°C  
Δ TJ  
V
DS = 600V, VGS = 0V  
VDS = 480V, TC = 125 °C  
GS = 30V, VDS = 0V  
VGS = -30V, VDS = 0V  
-
-
-
-
-
-
-
-
10  
uA  
uA  
nA  
nA  
IDSS  
Drain-Source Leakage Current  
100  
100  
-100  
V
Gate-Source Leakage, Forward  
Gate-source Leakage, Reverse  
IGSS  
On Characteristics  
VGS(th)  
V
V
DS = VGS, ID = 250uA  
GS =10 V, ID = 1.0A  
Gate Threshold Voltage  
2.0  
-
-
4.0  
5.0  
V
Static Drain-Source On-state Resis-  
tance  
RDS(ON)  
4.0  
Dynamic Characteristics  
Ciss  
Input Capacitance  
-
-
-
320  
35  
420  
46  
pF  
Coss  
Crss  
Output Capacitance  
VGS =0 V, VDS =25V, f = 1MHz  
Reverse Transfer Capacitance  
4.5  
6.0  
Dynamic Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-on Delay Time  
Rise Time  
-
-
-
-
-
-
8
30  
60  
60  
70  
13  
-
V
DD =300V, ID =2.0A, RG =25Ω  
(Note 4, 5)  
23  
25  
28  
9.5  
1.6  
ns  
Turn-off Delay Time  
Fall Time  
Qg  
Total Gate Charge  
Gate-Source Charge  
VDS =480V, VGS =10V, ID =2.0A  
(Note 4, 5)  
Qgs  
nC  
Qgd  
Gate-Drain Charge(Miller Charge)  
-
4.0  
-
Source-Drain Diode Ratings and Characteristics  
Symbol  
IS  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
2.0  
Unit.  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Integral Reverse p-n Junction  
Diode in the MOSFET  
-
-
-
-
-
-
A
ISM  
6.0  
VSD  
IS =2.0A, VGS =0V  
1.4  
V
trr  
Reverse Recovery Time  
-
-
230  
1.0  
-
-
ns  
uC  
IS=2.0A, VGS=0V, dIF/dt=100A/us  
Qrr  
Reverse Recovery Charge  
NOTES  
1. Repeativity rating : pulse width limited by junction temperature  
2. L = 55mH, IAS =2.0A, VDD = 50V, RG = 25, Starting TJ = 25°C  
3. ISD 2.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C  
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%  
5. Essentially independent of operating temperature.  
Copyright@Wisdom Semiconductor Inc., All rights reserved.