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W25Q20BWSNIP 参数 Datasheet PDF下载

W25Q20BWSNIP图片预览
型号: W25Q20BWSNIP
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 1.8V 2M位串行闪存 [1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 70 页 / 2014 K
品牌: WINBOND [ WINBOND ]
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W25Q20BW  
9. ELECTRICAL CHARACTERISTICS(1)  
(2)  
9.1 Absolute Maximum Ratings  
PARAMETERS  
SYMBOL  
VCC  
CONDITIONS  
RANGE  
UNIT  
Supply Voltage  
–0.6 to +4.0  
V
V
V
Voltage Applied to Any Pin  
Transient Voltage on any Pin  
VIO  
Relative to Ground  
–0.6 to VCC+0.4  
–2.0V to VCC+2.0V  
VIOT  
<20nS Transient  
Relative to Ground  
Storage Temperature  
TSTG  
TLEAD  
VESD  
–65 to +150  
See Note (3)  
°C  
°C  
V
Lead Temperature  
Electrostatic Discharge Voltage  
Human Body Model(4) –2000 to +2000  
Notes:  
1. Specification for W25Q20BW is preliminary. See preliminary designation at the end of this document.  
2. This device has been designed and tested for the specified operation ranges. Proper operation outside  
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.  
Exposure beyond absolute maximum ratings may cause permanent damage.  
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and  
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.  
4. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).  
9.2 Operating Ranges  
SPEC  
PARAMETER  
SYMBOL  
CONDITIONS  
FR = 80MHz  
UNIT  
MIN  
MAX  
Supply Voltage(1)  
VCC  
TA  
1.65  
1.95  
V
fR = 50MHz (Read Data 03h)  
Ambient Temperature,  
Operating  
Industrial  
–40  
+85  
°C  
Note:  
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of  
the programming (erase/write) voltage.  
Publication Release Date: January 25, 2011  
- 57 -  
Preliminary - Revision B