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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data  
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip  
Select (/CS) signal should be kept active low for the full duration of the /HOLD operation to avoid resetting  
the internal logic state of the device.  
6.2 WRITE PROTECTION  
Applications that use non-volatile memory must take into consideration the possibility of noise and other  
adverse system conditions that may compromise data integrity. To address this concern, the W25Q128BV  
provides several means to protect the data from inadvertent writes.  
6.2.1 Write Protect Features  
Device resets when VCC is below threshold  
Time delay write disable after Power-up  
Write enable/disable instructions and automatic write disable after erase or program  
Software and Hardware (/WP pin) write protection using Status Register  
Write Protection using Power-down instruction  
Lock Down write protection until next power-up  
*
One Time Program (OTP) write protection  
* Note: This feature is available upon special order. Please contact Winbond for details.  
Upon power-up or at power-down, the W25Q128BV will maintain a reset condition while VCC is below the  
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 38). While reset, all  
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage  
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This  
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status  
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until  
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to  
accomplish this.  
After power-up the device is automatically placed in a write-disabled state with the Status Register Write  
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector  
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a  
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-  
disabled state of 0.  
Software controlled write protection is facilitated using the Write Status Register instruction and setting the  
Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits. These  
settings allow a portion as small as 4KB sector or the entire memory array to be configured as read only.  
Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be enabled or  
disabled under hardware control. See Status Register section for further information. Additionally, the  
Power-down instruction offers an extra level of write protection as all instructions are ignored except for  
the Release Power-down instruction.  
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