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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
1. GENERAL DESCRIPTIONS  
The W25M02GV (2 x 1G-bit) Serial MCP (Multi Chip Package) Flash memory is based on the W25N  
Serial SLC NAND SpiFlash® series by stacking two individual W25N01GV die into a standard 8-pin  
package. It offers the highest memory density for the low pin-count package, as well as Concurrent  
Operations in Serial Flash memory for the first time. The W25M SpiStack® series is ideal for small form  
factor system designs, and applications that demand high Program/Erase data throughput. All W25N  
SpiFlash family devices are offered in space-saving packages which were impossible to use in the past for  
the typical NAND flash memory.  
The SpiStack® product series introduces a new “Software Die Select (C2h)” instruction, and a factory  
assigned “Die ID#” for each stacked die. Each W25N01GV die can be accessed independently even  
though the interface is shared. The SpiStack® feature only allows a single die to be Active and have  
control of the SPI interface at any given time to avoid bus contention.  
The W25M02GV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock,  
Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up  
to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and  
416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions.  
The W25M02GV provides a new Continuous Read Mode that allows for efficient access to the entire  
memory array with a single Read command. This feature is ideal for code shadowing applications.  
Additionally, the device supports JEDEC standard manufacturer and device ID, one 2,048-Byte Unique ID  
page, one 2,048-Byte parameter page and ten 2,048-Byte OTP pages. To provide better NAND flash  
memory manageability, user configurable internal ECC, bad block management are also available in  
W25M02GV.  
2. FEATURES  
New Family of SpiFlash Memories  
– W25M02GV: 2x1G-bit / 2x128M-byte  
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold  
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold  
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3  
– Compatible SPI serial flash commands  
Low Power, Wide Temperature Range  
– Single 2.7 to 3.6V supply  
– 25mA active, 20µA standby current  
– -40°C to +85°C operating range  
Flexible Architecture with 128KB blocks  
– Uniform 128K-Byte Block Erase  
– Flexible page data load methods  
Highest Performance Serial NAND Flash  
– 104MHz Standard/Dual/Quad SPI clocks  
– 208/416MHz equivalent Dual/Quad SPI  
– 50MB/S continuous data transfer rate  
– Fast Program/Erase performance  
Advanced Features  
– On chip 1-Bit ECC for memory array  
– ECC status bits indicate ECC results  
– bad block management and LUT(2) access  
– Software and Hardware Write-Protect  
– Power Supply Lock-Down and OTP protection  
– 2KB Unique ID and 2KB parameter pages  
– Ten 2KB OTP pages(3)  
– More than 100,000 erase/program cycles  
– More than 10-year data retention  
Efficient “Continuous Read Mode”(1)  
– Alternative method to the Buffer Read Mode  
– No need to issue “Page Data Read” between  
Read commands  
Space Efficient Packaging  
– 8-pad WSON 8x6-mm  
– 24-ball TFBGA 8x6-mm  
– Contact Winbond for other package options  
Notes:  
1. Only the Read command structures are different between  
the “Continuous Read Mode” and the “Buffer Read Mode”,  
all other commands are identical.  
– Allows direct read access to the entire array  
Flexible “Concurrent Operations”  
– Independent single die access  
– Allows “Read while Program/Erase”  
– Allows “Multi Die Program/Erase”  
– Improves Program/Erase throughput  
2. LUT stands for Look-Up Table.  
3. OTP pages can only be programmed.  
Publication Release Date: July 1, 2015  
- 6 -  
Preliminary - Revision B