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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
8.2.23 Fast Read Dual I/O (BBh)  
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO  
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input  
the Column Address or the dummy clocks two bits per clock. This reduced instruction overhead may allow  
for code execution (XIP) directly from the Dual SPI in some applications.  
The Fast Read Quad Output instruction sequence is shown in Figure 26a & 26b. When BUF=1, the device  
is in the Buffer Read Mode. The data output sequence will start from the Data Buffer location specified by  
the 16-bit Column Address and continue to the end of the Data Buffer. Once the last byte of data is output,  
the output pin will become Hi-Z state. When BUF=0, the device is in the Continuous Read Mode, the data  
output sequence will start from the first byte of the Data Buffer and increment to the next higher address.  
When the end of the Data Buffer is reached, the data of the first byte of next memory page will be  
following and continues through the entire memory array. This allows using a single Read instruction to  
read out the entire memory array and is also compatible to Winbond’s SpiFlash NOR flash memory  
command sequence.  
Figure 26a. Fast Read Dual I/O Instruction (Buffer Read Mode, BUF=1)  
Figure 26b. Fast Read Dual I/O Instruction (Continuous Read Mode, BUF=0)  
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