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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
8. INSTRUCTIONS  
The Standard/Dual/Quad SPI instruction set for each stacked W25N01GV die consists of 28 basic  
instructions that are fully controlled through the SPI bus (see Instruction Set Table1, 2). Instructions are  
initiated with the falling edge of Chip Select (/CS). The first byte of data clocked into the DI input provides  
the instruction code. Data on the DI input is sampled on the rising edge of clock with most significant bit  
(MSB) first.  
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data  
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the  
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in Figures 4  
through 29. All read instructions can be completed after any clocked bit. However, all instructions that  
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been  
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent  
writes. Additionally, while the device is performing Program or Erase operation, BBM management, Page  
Data Read or OTP locking operations, BUSY bit will be high, and all instructions except for Read Status  
Register or Read JEDEC ID will be ignored until the current operation cycle has completed.  
8.1 Device ID and Instruction Set Tables  
8.1.1 Manufacturer and Device Identification  
MANUFACTURER ID  
(MF7 - MF0)  
Winbond Serial Flash  
EFh  
(ID15 - ID0)  
Device ID  
Single Die W25N01GV  
2x stacked  
AB21h  
Publication Release Date: July 1, 2015  
Preliminary - Revision B  
- 22 -  
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