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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
6.2 Write Protection  
Applications that use non-volatile memory must take into consideration the possibility of noise and other  
adverse system conditions that may compromise data integrity. To address this concern, the W25M02GV  
provides several means to protect the data from inadvertent writes.  
Device resets when VCC is below threshold  
Write enable/disable instructions and automatic write disable after erase or program  
Software and Hardware (/WP pin) write protection using Protection Register (SR-1)  
Lock Down write protection for Protection Register (SR-1) until the next power-up  
One Time Program (OTP) write protection for memory array using Protection Register (SR-1)  
Hardware write protection using /WP pin when WP-E is set to 1  
Upon power-up or at power-down, the W25M02GV will maintain a reset condition while VCC is below the  
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 30a). While reset, all  
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage  
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This  
includes the Write Enable, Program Execute, Block Erase and the Write Status Register instructions. Note  
that the chip select pin (/CS) must track the VCC supply level at power-up until the VCC-min level and tVSL  
time delay is reached, and it must also track the VCC supply level at power-down to prevent adverse  
command sequence. If needed a pull-up resister on /CS can be used to accomplish this.  
After power-up the device is automatically placed in a write-disabled state with the Status Register Write  
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Program Execute or  
Block Erase instruction will be accepted. After completing a program or erase instruction the Write Enable  
Latch (WEL) is automatically cleared to a write-disabled state of 0.  
Software controlled write protection is facilitated using the Write Status Register instruction and setting the  
Status Register Protect (SRP0, SRP1) and Block Protect (TB, BP[3:0]) bits. These settings allow a portion  
or the entire memory array to be configured as read only. Used in conjunction with the Write Protect (/WP)  
pin, changes to the Status Register can be enabled or disabled under hardware control. See Protection  
Register section for further information.  
The WP-E bit in Protection Register (SR-1) is used to enable the hardware protection. When WP-E is set  
to 1, bringing /WP low in the system will block any Write/Program/Erase command to the W25M02GV, the  
device will become read-only. The Quad SPI operations are also disabled when WP-E is set to 1.  
Publication Release Date: July 1, 2015  
- 14 -  
Preliminary - Revision B  
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