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SE9435LT1 参数 Datasheet PDF下载

SE9435LT1图片预览
型号: SE9435LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 30V P沟道增强型MOSFET [30V P-Channel Enhancement-Mode MOSFET]
分类和应用:
文件页数/大小: 4 页 / 412 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
SOT-23
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
Lead-free parts meet environmental standards of
.106(2.70)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
30V P-Channel Enhancement-Mode MOSFET
Features
FM120-M
THRU
SE9435LT1
FM1200-M
Pb Free Product
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
Mechanical data
.063(1.60)
.047(1.20)
.110(2.80)
0.031(0.8) Typ.
.086(2.10)
10
100
70
100
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
.080(2.04)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
.004(0.10)MAX.
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
.055(1.40)
.035(0.89)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.020(0.50)
.012(0.30)
 
Amps
 
 
 
C
J
 
T
J
Dimensions in
-55 to +125
and (millimeters)
inches
TSTG
 
-55 to +150
℃/W
PF
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
0.50
0.037
@T A=125℃
0.95
I
R
0.037
0.95
0.70
0.5
10
0.85
0.9
0.92
 
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.