WILLAS
30V P-Channel Enhancement-Mode MOSFET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
THRU
SE9435LT1
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
DS
•
Low power loss, high efficiency.
R
DS(ON)
, V
gs
@-10V,
ds
@-5.3A =
70mΩ
•
High current capability, low
I
forward voltage drop.
•
High surge capability.
R
DS(ON)
, V @-4.5V, I
ds
@-4.2A =
100mΩ
overvoltage protection.
•
Guardring for
gs
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Features
optimize board space.
V = -30V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
Mechanical data
FOM
Improved Shoot-Through
MIL-STD-19500 /228
Advanced trench process technology
RoHS product for packing code suffix "G"
Halogen free product for packing code
Low On-Resistance
High Density Cell Design For Ultra
suffix "H"
SOT-23
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic,
is available
Pb-Free package
SOD-123H
,
•
Terminals :Plated
for packing code suffix ”G”
RoHS product
terminals, solderable per MIL-STD-750
Method 2026
Halogen free product for packing code suffix “H”
0.031(0.8) Typ.
0.031(0.8) Typ.
3
D
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
▼
Simple Drive
0.011 gram
•
Weight : Approximated
Requirement
Ratings at
▼
Surface
temperature unless otherwise specified.
25℃ ambient
Mount Device
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Dimensions in inches and (millimeters)
G
1
2
S
▼
Small Package Outline
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS AND
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Ordering Information
Maximum RMS Voltage
Device
Maximum DC Blocking Voltage
V
RRM
V
RMS
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Marking
V
DC
I
O
I
FSM
20
Shipping
30
3000/Tape&Reel
SE9435LT1
Maximum Average Forward Rectified Current
P94
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
℃/W
PF
℃
℃
UNIT
Volts
mAmps
40
R
ΘJA
Maximum Ratings and Thermal
C
J
Characteristics
(T
A
= 25
o
C unless otherwise noted)
120
Typical Junction Capacitance (Note 1)
-55 to +125
-55 to +150
Operating Temperature Range
T
J
Symbol
Parameter
Limit
Typical Thermal Resistance (Note 2)
Storage Temperature Range
V
V
GS
CHARACTERISTICS
± 20
Gate-Source
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Voltage
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
V
DS
Drain-Source Voltage
V
F
I
R
0.50
0.70
TSTG
-
65
to +175
Unit
-30
0.85
0.9
0.92
I
D
Continuous Drain Current
Pulsed Drain Current
@T A=125℃
1)
0.5
10
o
TA = 25 C
o
TA = 75 C
-5.3
-20
1.4
I
DM
Rated DC Blocking Voltage
A
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
P
D
Maximum Power Dissipation
W
0.8
-55 to 150
50
2)
o
o
2- Thermal Resistance From Junction to Ambient
T
J
, T
stg
R
θJC
R
θJA
Operating Junction and Storage Temperature Range
C
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
2. 1-in
2
2oz Cu PCB board
90
C/W
Note:
1. Repetitive Rating: Pulse width limited by the maximum junction temperature
3. Guaranteed by design; not subject to production testing
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
