WILLAS
30V P-Channel Enhancement-Mode MOSFET
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
ELECTRICAL CHARACTERISTICS
dissipation offers
•
Batch process design, excellent power
better reverse leakage current and thermal resistance.
FM120-M
THRU
SE9435LT1
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low
Symbol
profile surface mounted application in order to
Parameter
optimize board space.
•
Low
Static
power loss, high efficiency.
•
High current capability, low forward voltage drop.
BV
DSS
Drain-Source Breakdown Voltage
•
High surge capability.
•
Guardring for overvoltage protection.
R
DS(on)
Drain-Source On-State Resistance
•
Ultra high-speed switching.
R
DS(on)
Drain-Source
chip, metal silicon junction.
•
Silicon epitaxial planar
On-State Resistance
•
Lead-free parts meet environmental standards of
V
GS(th)
Gate Threshold Voltage
MIL-STD-19500 /228
I
•
RoHS product for packing code
Drain
"G"
Zero Gate Voltage
suffix
Current
DSS
Halogen free product for packing code suffix "H"
Test Condition
V
GS
= 0V, I
D
= -250uA
V
GS
= -4.5V, I
D
= -4.2A
V
GS
= -10V, I
D
= -5.3A
V
DS
=V
GS
, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= ± 20V, V
DS
= 0V
Min
0.146(3.7)
0.130(3.3)
Typ
Max
0.012(0.3) Typ.
Unit
-30
70.0
50.0
-1
-1.7
100.0
0.071(1.8)
0.056(1.4)
V
mΩ
V
uA
nA
S
70.0
-3
1
I
GSS
Gate Body Leakage
Mechanical data
±100
10
0.040(1.0)
0.024(0.6)
g
Epoxy : UL94-V0 rated flame retardant
V
DS
= -10V, I
D
= -5.3A
Forward Transconductance
•
fs
•
Case : Molded plastic, SOD-123H
Dynamic
3)
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Q
g
Total Gate Charge
0.031(0.8) Typ.
28
3
7
9
nC
•
Polarity : Indicated by cathode band
Q
gd
Gate-Drain Charge
•
Mounting Position : Any
•
Weight :
Turn-On Delay Time
Approximated 0.011 gram
t
d(on)
t
r
Q
gs
Method 2026
Gate-Source Charge
V
DS
=-15V, I
D
= -5.3A
V
GS
= -10V
Dimensions in inches and (millimeters)
t
d(off)
Ratings at 25℃ ambient temperature unless otherwise specified.
R = 6
Turn-Off Delay Time
G
Single phase half wave, 60Hz, resistive of inductive load.
t
f
Turn-Off Fall Time
For capacitive load, derate current by 20%
C
iss
Marking
C
oss
Code
Turn-On Rise Time
MAXIMUM RATINGS AND ELECTRICAL
= -1A, V
= -10V
I
CHARACTERISTICS
D
GEN
V
DD
= -15V, R
L
= 15Ω
15
75
40
745
ns
Input Capacitance
RATINGS
Output Capacitance
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
C
rss
Reverse Transfer Capacitance
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
DS
= -15V, V
GS
= 0V
12
13
14
15
f = 1.0
30
MHz
40
20
50
14
20
21
30
28
40
35
50
16
60
42
60
1.0
30
40
120
18
440
10
80
100
56
80
120
115
150
105
150
120
pF
200
140
200
Volts
Volts
Volts
Amps
70
100
Source-Drain Diode
Maximum DC Blocking Voltage
I
Average Forward Rectified Current
Current
Maximum
S
Max. Diode Forward
-2.6
-1.3
A
V
V
SD
Peak Forward Surge
Diode
8.3 ms single half sine-wave
Current
Forward Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
I
S
= -2.6A, V
GS
= 0V
Amps
℃/W
PF
℃
℃
superimposed on
Pulse test: pulse width <= 300us, duty cycle<= 2%
Note
rated load (JEDEC method)
:
R
ΘJA
C
J
T
J
TSTG
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
