FM120-M
THRU
MMBTH10LT1
VHF/UHF Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
y
rb
, REVERSE TRANSFER ADMITTANCE (mmhos)
•
Low profile surface mounted application in order to
TYPICAL CHARACTERISTICS
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
COMMON–BASE y PARAMETERS versus FREQUENCY
•
High surge capability.
(V
CB
= 10 Vdc, I
C
= 4.0 mAdc, T
A
= 25°C)
•
Guardring for overvoltage protection.
y
rb
, REVERSE TRANSFER ADMITTANCE
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
0
5.0
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
H11
MPS
jb
rb
(mmhos)
4.0
100
–1.0
200
400
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
–b
rb
•
Case : Molded plastic, SOD-123H
–b
rb
2.0
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1.0
3.0
–2.0
0.040(1.0)
0.024(0.6)
–3.0
0.031(0.8) Typ.
0.031(0.8) Typ.
700
–4.0
Method 2026
MPS H1
–g
rb
400
500
700
1000
•
Polarity : Indicated by cathode band
•
Mounting
0
Position : Any
100
200
300
•
Weight : Approximated 0.011 gram
–5.0
2.0
1.8
Dimensions in inches and (millimeters)
1000MHz
1.2
0.8
0.4
0
0.4
0.8
1.2
1.6
2.0
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
10
MAXIMUM
Figure 5. Rectangular Form
RATINGS AND ELECTRICAL CHARACTERISTICS
Figure 6. Polar Form
f, FREQUENCY (MHz)
g
rb
(mmhos)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
y
ob
, OUTPUT ADMITTANCE
13
30
21
30
14
40
10
28
40
8.0
15
50
35
50
700
6.0
y
ob
, OUTPUT ADMITTANCE (mmhos)
V
RRM
V
RMS
V
DC
I
O
b
ob
12
20
14
20
16
60
1000MHz
42
18
80
56
80
1.0
30
40
120
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Maximum RMS Voltage
9.0
Maximum DC Blocking Voltage
8.0
Maximum Average
7.0
Forward Rectified Current
Volts
60
Volts
jb
ob
(mmhos)
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
5.0
4.0
3.0
6.0
I
FSM
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
2.0
Operating Temperature Range
1.0
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
200
300
400
500
4.0
400
200
100
g
ob
700
-55 to +150
℃/W
PF
℃
℃
-55 to +125
2.0
-
65
to +175
0
0
100
1000
CHARACTERISTICS
0
2.0
4.0
FM1100-MH
8.0
FM1150-MH
10
FM1200-MH
UNIT
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
6.0
Maximum Forward Voltage at 1.0A DC
f , FREQUENCY (MHz)
V
F
Maximum Average Reverse Current at @T A=25℃
Figure 7. Rectangular Form
I
R
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.85
g
ob
(mmhos)
0.5
Figure 8. Polar Form
10
0.9
0.92
Volts
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
