FM120-M
THRU
MMBTH10LT1
VHF/UHF Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
•
Low profile surface mounted application in order to
TYPICAL CHARACTERISTICS
optimize board space.
0.146(3.7)
•
Low power loss, high efficiency.
COMMON–BASE y PARAMETERS versus FREQUENCY
0.130(3.3)
•
High current capability, low forward voltage drop.
(V
CB
= 10 Vdc, I C = 4.0 mAdc, T
A
= 25°C)
•
High surge capability.
•
Guardring for overvoltage protection.
yib , INPUT ADMITTANCE
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
80
0
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
70
g
ib
–10
RoHS product for packing code suffix "G"
•
60
Halogen free product for packing code suffix "H"
y
ib
, INPUT ADMITTANCE(mmhos)
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
:
•
Epoxy
40
UL94-V0 rated flame retardant
Molded plastic, SOD-123H
•
Case :
30
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
20
Method 2026
10
•
Polarity : Indicated by cathode band
0
•
Mounting Position : Any
100
200
300
400
•
Weight : Approximated 0.011 gram
–b
ib
jb
ib
(mmhos)
50
Mechanical data
–20
–30
–40
–50
1000MHz
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
700
400
0.031(0.8) Typ.
200
100
Dimensions in inches and (millimeters)
500
700
1000
–60
0
10
20
30
40
50
60
70
80
f, FREQUENCY (MHz)
g
ib
(mmhos)
Figure 1. Rectangular Form
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Figure 2. Polar Form
y
ib
, FORWARD TRANSFER ADMITTANCE (mmhos)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
, FORWARD TRANSFER ADMITTANCE
y fb
For capacitive load, derate current by 20%
Marking Code
70
60
50
40
30
20
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
300
400
TSTG
500
b
fb
12
20
14
20
13
30
21
30
jb
fb
(mmhos)
60
14
40
40
100
15
200
50
35
50
16
400
60
42
60
1.0
30
40
120
18
80
56
600
80
10
100
70
100
700
115
150
105
150
120
200
140
200
Volts
50
28
40
Volts
Maximum Average Forward Rectified Current
–g
fb
Volts
Amp
10
Peak Forward Surge Current 8.3 ms single half sine-wave
1000MHz
superimposed on rated load (JEDEC method)
0
30
Amp
Typical Thermal Resistance (Note 2)
–10
Typical Junction
–20
Capacitance (Note 1)
Operating Temperature Range
–30
Storage Temperature Range
100
200
700
1000
20
-55 to +150
20
10
0
10
20
30
℃/W
PF
℃
℃
-55 to +125
10
70
60
50
40
-
65
to +175
30
g
fb
FM180-MH
f, FREQUENCY (MHz)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
(mmhos)
FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Figure 4. Polar
0.85
Form
Figure
Volts
0.9
Maximum Forward Voltage at 1.0A DC
3. Rectangular
F
0.92
V
Form
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
R
0.5
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
