FM120-M
THRU
MMBTH10LT1
VHF/UHF Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
RoHS requirements.
We declare that the material of product
compliance with
•
Low profile
package
mounted application in order to
Pb-Free
surface
is available
optimize board space.
RoHS product for packing code suffix ”G”
•
Low power loss, high efficiency.
Halogen free product for
forward voltage drop.
•
High current capability, low
packing code suffix “H”
•
High surge capability.
Ordering Information
•
Guardring for overvoltage protection.
Device
Marking
Shipping
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
3000/Tape&Reel
MMBTH10LT1
3EM
•
Lead-free parts meet environmental standards of
MAXIMUM RATINGS
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Rating
Symbol
Value
Unit
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Collector–Emitter Voltage
V
CEO
25
Vdc
Vdc
Vdc
0.031(0.8) Typ.
•
Epoxy : UL94-V0
Voltage
Collector–Base
rated flame retardant
V
CBO
30
•
Case : Molded plastic, SOD-123H
V
Emitter–Base Voltage
3.0
EBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
THERMAL
Method 2026
CHARACTERISTICS
SOT–23
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Characteristic
•
Mounting Position : Any
FR– 5 Board, (1)
Total Device Dissipation
•
Weight
25°C
T
A
=
: Approximated 0.011 gram
Derate above 25°C
Symbol
P
D
Max
225
1.8
Unit
mW
Dimensions in inches and (millimeters)
2
EMITTER
1
BASE
mW/°C
MAXIMUM RATINGS
Ambient
Thermal Resistance, Junction to
AND ELECTRICAL CHARACTERISTICS
R
θJA
556
°C/W
Ratings at 25℃ ambient
Dissipation
unless otherwise specified.
temperature
Total Device
300
mW
P
D
Single phase half wave, 60Hz, resistive
25°C
Alumina Substrate, (2) T
A
=
of inductive load.
2.4
mW/°C
For capacitive load,
above 25°C
Derate
derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
T
J
Marking Code
Junction and Storage Temperature
12
, T
stg
13
–55 to +150
15
°C
14
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Maximum
DEVICE MARKING
RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RMS
V
DC
14
20
21
30
28
40
35
50
42
60
1.0
30
Max
40
120
—
56
80
70
100
105
150
140
200
Volts
I
O
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Characteristic
Symbol
Min
superimposed on rated load (JEDEC method)
Typical Thermal
CHARACTERISTICS
OFF
Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
MMBTH10LT1=
3EM
Volts
Amps
Unit
Typ
Amps
R
ΘJA
C
J
T
J
TSTG
Collector–Emitter Breakdown Voltage
-55
V
(BR)CEO
to +125
25
Vdc
-55 to +150
Vdc
0.85
Vdc
0.9
0.92
℃/W
PF
℃
℃
(I
C
= 1.0 mAdc, I = 0 )
Storage Temperature Range
B
—
Emitter–Base Breakdown
Maximum Forward Voltage at 1.0A DC
Voltage
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc
, I
E
= 0)
CHARACTERISTICS
V
(BR)CBO
V
F
I
R
30
0.50
3.0
-
65
to +175
—
—
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
(I
E
=
Reverse Current
Maximum Average
10
µAdc
, I
C
= 0)
at @T A=25℃
Collector Cutoff
Rated DC Blocking Voltage
Current
@T A=125℃
( V
CB
= 25Vdc , I
E
= 0 )
CB
E
V
(BR)EBO
I
CBO
I
CBO
I
EBO
—
0.70
—
—
—
0.5
10
100
Volts
—
—
nAdc
uAdc
mAmp
NOTES:
Collector Cutoff Current
1- Measured at
(
1 MHZ and applied reverse voltage of 4.0 VDC.
V = 30Vdc , I = 0 )
100
2- Thermal Resistance From Junction to Ambient
Emitter Cutoff Current
( V
EB
= 2.0Vdc , I
C
= 0 )
—
—
100
nAdc
Emitter Cutoff Current
(V
= 3.0Vdc , I = 0 )
I
EBO
—
—
10
uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
WILLAS ELECTRONIC CORP.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
