FM120-M
THRU
MMBT4403WT1
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
dissipation offers
•
Batch process design, excellent power
STATIC CHARACTERISTICS
WILLAS
Pb Free Produ
Features
Package outline
SOD-123H
h
FE
, NORMALIZED CURRENT GAIN
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
3.0
•
Low power loss, high efficiency.
V = 1.0 V
capability, low forward voltage drop.
•
High current
CE
2.0
capability.
•
High surge
V
CE
= 10 V
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
1.0
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
0.7
MIL-STD-19500 /228
0.5
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
0.3
T
J
= 125°C
25°C
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
–55°C
Mechanical data
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.2
plastic, SOD-123H
•
Case : Molded
0.3
0.1
0.2
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
0.031(0.8) Typ.
30
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
CURRENT (mA)
I , COLLECTOR
Method 2026
50
70
100
20
300
0.031(0.8) Typ.
500
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
1.0
•
Weight : Approximated 0.011 gram
0.8
Figure 14. DC Current Gain
Dimensions in inches and (millimeters)
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100mA
500mA
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
0.6
phase half wave,
mA
inductive load.
I
C
=1.0
60Hz, resistive of
10 mA
For capacitive load, derate current by 20%
0.4
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
0.2
Maximum RMS Voltage
Maximum DC Blocking Voltage
0
0.02 0.03
0.05
Maximum
0.005 0.01
Average Forward Rectified Current
0.07
V
RRM
V
RMS
V
DC
0.1
0.2
I
O
0.3
12
20
14
20
0.5
13
30
21
30
0.7
1.0
14
40
28
40
2.0
15
50
35
50
3.0
5.0
16
60
42
60
7.0
1.0
10
18
80
56
80
20
10
100
70
100
30
50
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I , BASE CURRENT (mA)
B
I
FSM
Figure 15. Collector Saturation Region
R
ΘJA
C
J
T
J
TSTG
30
40
120
Typical Thermal Resistance (Note 2)
10
Typical Junction
25°C
T =
Capacitance (Note 1)
+ 0.5
-55 to +150
Operating Temperature Range
J
-55 to +125
0
-
for V
+175
θ
VC
65
to
CE(sat)
COEFFICIENT (mV/ °C)
V
0.8
Storage Temperature Range
BE(sat)
@ I
C
/I
B
=10
V, VOLTAGE ( VOLTS )
0.6
CHARACTERISTICS
BE
CE
Maximum Forward Voltage at 1.0A DC
V @V
=1.0 V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
– 0.5
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.4
–1.0
–1.5
–2.0
– 2.5
0.50
0.70
0.5
10
0.85
0.9
0.92
@T A=125℃
NOTES:
0.2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
@ I /I =10
2- Thermal Resistance From Junction to Ambient
0
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
CE(sat)
C
B
θ
VS
for V
BE
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I
C
, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
