FM120-M
THRU
MMBT4403WT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Bandwidth
better reverse leakage current and thermal resistance.
= 1.0 Hz
•
Low profile surface mounted application in order to
10
optimize board space.
•
Low power loss, high efficiency.
8
•
High current capability, low forward voltage drop.
•
High surge capability.
= 1.0 mA, R
S
C
protection.
•
Guardring for
I
overvoltage
= 430Ω
6
I
C
= 500
µA,
R
S
= 560Ω
•
Ultra high-speed switching.
I
C
= 50
µA,
R = 2.7kΩ
chip,
•
Silicon epitaxial planar
R
S
= 1.6
metal silicon junction.
kΩ
I
C
= 100
µA,
S
4
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for
R
packing code suffix "G"
2
= OPTIMUM SOURCE RESISTANCE
S
Halogen free product for packing code suffix "H"
NF, NOISE FIGURE (dB)
V
CE
= –10 Vdc,
•
Batch process design, excellent power dissipation offers
T
A
= 25°C
SOD-123H
WILLAS
Features
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
Package
SOD-123
PACKAGE
Pb Free Produ
outline
10
f = 1.0 kHz
8
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
NF, NOISE FIGURE (dB)
6
4
I
C
= 50
µA
100
µA
500
µA
1.0 mA
0.071(1.8)
0.056(1.4)
2
0
Mechanical data
0.010.02 0.05 0.1 0.2
Epoxy : UL94-V0
0.5 1.0 2.0
rated flame
5.0 10
retardant
20
50
100
0
50 100
200
500
1k
2k
5k
10k
20k
•
f FREQUENCY (kHz)
•
Case : Molded
,
plastic, SOD-123H
,
Figure 8. Frequency Effects
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
50k
0.024(0.6)
Figure 9. Source Resistance Effects
S
0.031(0.8) Typ.
R , SOURCE RESISTANCE (Ω)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
(V
CE
= –10 Vdc, f = 1.0 kHz, T
A
= 25°C)
•
Mounting Position : Any
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
•
Weight : Approximated 0.011 gram
from the MMBT4403WT1 lines, and the same units were used to develop the correspondingly
a high–gain and a low–gain unit were selected
h PARAMETERS
numbered curves on each graph.
h
ie
, INPUT IMPEDANCE (kΩ)
Ratings at 25℃ ambient temperature unless otherwise specified.
700
Single phase half wave, 60Hz, resistive of inductive load.
500
For capacitive load, derate current by 20%
h
fe
, CURRENT GAIN
300
1000
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
50
20
10
5
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
200
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
100
Maximum DC Blocking Voltage
70
50
Maximum Average Forward Rectified Current
MMBT4403WT1 UNIT 1
V
RMS
MMBT4403WT1 UNIT 2
V
RRM
V
DC
I
O
12
20
14
20
13
30
2
21
1
30
0.5
0.2
0.1
0.1
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
30
0.1
0.2 0.3
0.5
method)
superimposed on rated load (JEDEC
0.7 1.0
2.0
3.0
I
FSM
2.0
3.0
7.0 5.0
10
7.0 5.0
10
0.2
0.3
0.5 0.7
1.0
I
C
, COLLECTOR
Typical Thermal Resistance (Note 2)
CURRENT (mAdc)
R
ΘJA
h
re
, VOLTAGE FEEDBACK RATIO (X 10
–4
)
Figure 10. Current Gain
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
10
5.0
20
C
J
T
J
TSTG
-55 to +125
h
oe
, OUTPUT ADMITTANCE (
µmhos)
500
I
C
, COLLECTOR CURRENT (mAdc)
40
Figure 11. Input
120
Impedance
-55 to +150
-
65
to +175
CHARACTERISTICS
MMBT4403WT1 UNIT 1
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
1.0
0.5
MMBT4403WT1 UNIT 2
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
SYMBOL
100
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
2.0
50
20
10
5.0
2.0
1.0
0.50
0.70
0.85
0.9
0.92
0.5
10
MMBT4403WT1 UNIT 1
MMBT4403WT1 UNIT 2
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
I
C
, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mAdc)
Figure 13. Output Admittance
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
