FM120-M
THRU
MMBT4403WT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
SOD-123
PACKAGE
TYPICAL TRANSIENT CHARACTERISTICS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
30
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
20
•
High surge capability.
C
eb
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
10
•
Silicon epitaxial planar chip, metal silicon junction.
7.0
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
C
cb
5.0
Halogen free product for packing code suffix "H"
3.0
WILLAS
Pb Free Produ
Features
Package outline
SOD-123H
T
J
= 25°C
T
J
= 100°C
0.012(0.3) Typ.
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.146(3.7)
0.130(3.3)
I
C
/ I
B
= 10
V
CC
= 30 V
Q, CHARGE (nC)
CAPACITANCE (pF)
0.071(1.8)
0.056(1.4)
Q
T
Q
A
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
2.0
•
Case : Molded plastic, SOD-123H
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
REVERSE VOLTAGE (VOLTS)
Method 2026
0.031(0.8) Typ.
20
30
50
70
100
200
300
0.031(0.8) Typ.
500
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
100
•
Weight : Approximated 0.011 gram
70
50
Figure 4. Charge
and (millimeters)
Dimensions in inches
Data
100
70
50
I
C
/I
B
= 10
t
r
, RISE TIME (ns)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
30
t , TIME (ns)
Ratings at 25℃ ambient temperature unless
t
otherwise specified.
@V
CC
=30V
r
t
r
@V
CC
load.
Single phase half wave, 60Hz, resistive of inductive
=10V
30
For capacitive load, derate current by 20%
t
d
@V
BE(off)
= 2.0V
20
V
CC
= 30V
I
C
/ I
B
=10
RATINGS
t
d
@V
BE(off)
= 0V
20
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
10
7.0
Maximum RMS Voltage
V
RRM
V
RMS
V
DC
200
12
20
14
20
500
13
30
10
21
7.0
30
5.0
10
14
40
28
40
20
15
50
35
50
30
50
16
60
42
60
1.0
70 100
18
80
56
80
200
10
100
70
100
300
115
150
105
150
500
120
200
140
200
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
10
20
30
50
70 100
I
O
300
Peak Forward Surge Current 8.3 ms single half sine-wave
I
C
, COLLECTOR CURRENT (mA)
FSM
I
superimposed on rated load (JEDEC method)
Figure 5. Turn–On
5.0
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Time
I
C
, COLLECTOR CURRENT (mA)
30
R
ΘJA
C
J
T
J
TSTG
Figure 6. Rise Time
40
120
Typical Junction Capacitance (Note 1)
200
-55 to +125
I
C
/I
B
= 20
-55 to +150
-
65
to +175
t
s
, RISE TIME (ns)
100
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
70
V
F
@T A=125℃
50
I
C
/I
B
= 10
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
30
t
s
’ = t
s
– 1/8 t
f
I
B1
= I
B2
2- Thermal Resistance From Junction to Ambient
20
10
20
30
50
70
100
200
300
500
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
