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MMBT3906TT1 参数 Datasheet PDF下载

MMBT3906TT1图片预览
型号: MMBT3906TT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 6 页 / 378 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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FM120-M
THRU
MMBT3906TT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
SOT-523
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
Mechanical data
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.031(0.8) Typ.
.069(1.75)
.057(1.45)
.008(0.20)
.004(0.10)
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
.043(1.10)
Single phase half wave, 60Hz, resistive of inductive load.
.035(0.90)
 
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.004(0.10)MAX.
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
-55 to +125
.035(0.90)
.028(0.70)
 
40
120
 
-55 to +150
 
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
-
65
to +175
TSTG
.014(0.35)
SYMBOL
.006(0.15)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.70
0.85
0.9
0.92
 
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Dimensions in inches and (millimeters)
 
 
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.