FM120-M
THRU
MMBT3906TT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
TYPICAL STATIC CHARACTERISTICS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
2.0
optimize board space.
•
Low power loss, high efficiency.
T
J
= +125°C
•
High current capability, low forward voltage drop.
1.0
High surge capability.
+25°C
•
•
Guardring for overvoltage protection.
0.7
•
Ultra high-speed switching.
–55°C
0.5
Silicon epitaxial planar chip, metal silicon junction.
•
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.3
•
RoHS product for packing code suffix "G"
0.2
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
Pb Free Produ
Features
Package outline
h
FE
, DC CURRENT GAIN (NORMALIZED)
0.146(3.7)
0.130(3.3)
V
CE
= 1.0 V
Typ.
0.012(0.3)
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
0.1
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
10
0.031(0.8) Typ.
20
Case : Molded plastic, SOD-123H
1.0
•
0.1
,
, COLLECTOR
•
Terminals :Plated terminals, solderable per
I
MIL-STD-750
CURRENT (mA)
C
Method 2026
0.040(1.0)
0.024(0.6)
30
50
70
100
200
0.031(0.8) Typ.
Figure 13. DC Current Gain
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
1.0
•
Weight : Approximated 0.011 gram
0.8
Dimensions in inches and (millimeters)
T
J
= 25°C
MAXIMUM RATINGS AND
10 mA
ELECTRICAL
I
C
=1.0 mA
Ratings at 25℃ ambient temperature unless otherwise specified.
CHARACTERISTICS
30 mA
100 mA
0.6
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.4
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
0.2
Maximum RMS Voltage
Maximum DC Blocking Voltage
0
0.02
0.03
0.05
Maximum
0.01
Average Forward Rectified Current
V
RRM
V
RMS
V
DC
0.07
0.1
12
20
14
20
0.2
0.3
13
30
21
30
0.5
14
40
28
40
0.7
15
50
35
50
1.0
16
60
42
60
2.0
1.0
30
18
80
56
80
3.0
10
100
70
100
5.0
7.0
115
150
105
150
10
120
200
140
200
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
B
, BASE CURRENT (mA)
I
FSM
Figure 14. Collector Saturation Region
R
ΘJA
C
J
T
J
1.0
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.0
0.8
1.2
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
TSTG
V
BE
@ V
CE
=1.0 V
-55 to +125
0.5
θ
VC
for V
CE(sat)
0
– 0.5
–1.0
–1.5
–2.0
40
120
-55 to +150
-
+25°C TO +125°C
65
to +175
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
0.6
Maximum Average Reverse Current at @T A=25℃
0.4
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
–55°C TO +25°C
0.85
0.9
0.92
I
R
0.5
10
+25°C TO +125°C
–55°C TO +25°C
NOTES:
0.2
V
CE(sat)
@ I
C
/I
B
=10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
θ
VB
for V
BE(sat)
20
40
60
80
100
120
140
160
180
200
0
2- Thermal Resistance From Junction to Ambient
1.0
2.0
5.0
10
20
50
100
200
0
C , COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
2012-11
2012-06
WILLAS
WILLAS ELECTRONIC COR
ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
