FM120-M
THRU
MMBT3906TT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
VARIATIONS
NOISE FIGURE
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
NF, NOISE FIGURE (dB)
better reverse leakage current and thermal resistance.
SOD-123H
Vdc, T
A
application
•
Low profile surface mounted
(V
CE
= – 5.0
in order to
= 25°C, Bandwidth = 1.0 Hz)
optimize board space.
14
0.146(3.7)
•
Low power loss, high efficiency.
SOURCE RESISTANCE= 200Ω
0.130(3.3)
f = 1.0 kHz
I
C
= 1.0 mA
•
High
= 1.0 mA
capability, low forward voltage drop.
I
C
current
12
•
High surge capability.
I
C
= 0.5 mA
SOURCE RESISTANCE= 200
Ω
•
Guardring for overvoltage protection.
10
I
C
= 0.5 mA
•
Ultra high-speed switching.
8
SOURCE RESISTANCE =1.0kΩ
•
Silicon epitaxial planar chip, metal silicon junction.
I
C
= 50
µA
•
Lead-free parts meet environmental standards of
6
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
4
Halogen free product for packing code suffix "H"
SOURCE RESISTANCE= 500Ω
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
I
C
= 50
µA
I
C
= 100
µA
0.040(1.0)
0.024(0.6)
Mechanical data
I = 100
µA
C
2
0
0.1
0.2
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
0
0.1
0.2 0.4
10
100
plastic,
4.0
•
Case : Molded
1.0 2.0
SOD-123H
20 40
,
•
Terminals :Plated terminals,
(kHz)
solderable per MIL-STD-750
f, FREQUENCY
Figure 7. Noise Figure
Method 2026
0.4
1.0
2.0
4.0
10
20
40
0.031(0.8) Typ.
100
R
g
, SOURCE RESISTANCE (kΩ)
•
Polarity : Indicated by cathode band
h PARAMETERS
•
Mounting Position : Any
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
•
Weight : Approximated 0.011 gram
h
oe
, OUTPUT ADMITTANCE (
µmhos)
300
100
50
Figure 8. Noise Figure
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
h
fe
, DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
200
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
Maximum Recurrent Peak Reverse Voltage
70
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
50
100
20
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
10
V
RRM
V
RMS
V
DC
I
O
2.0
3.0
12
20
14
20
10
13
30
5
21
30
2
1
0.1
14
40
28
40
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
5.0
115
150
105
150
10
120
200
140
200
30
Peak Forward Surge Current 8.3 ms single half sine-wave
C
superimposed on rated load (JEDEC method)
0.1
0.2
0.3
0.5
1.0
5.0
I , COLLECTOR CURRENT (mA)
I
FSM
1.0
0.2 0.3
0.5
1.0
2.0 3.0
30
I
C
, COLLECTOR CURRENT (mA)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
10
Storage Temperature Range
20
Figure 9. Current Gain
R
ΘJA
h
re
, VOLTAGE FEEDBACK RATIO (X 10
–4
)
Typical Junction Capacitance (Note 1)
C
J
T
J
TSTG
Figure 10. Output Admittance
40
120
-55 to +125
7.0
5.0
3.0
2.0
10
-
65
to +175
-55 to +150
h
ie
, INPUT IMPEDANCE (kΩ)
5.0
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
2.0
Rated DC Blocking Voltage
1.0
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.5
2- Thermal Resistance From Junction to Ambient
0.2
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
2012-06
2012-11
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
