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MMBT2907AWT1 参数 Datasheet PDF下载

MMBT2907AWT1图片预览
型号: MMBT2907AWT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 3 页 / 285 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号MMBT2907AWT1的Datasheet PDF文件第1页浏览型号MMBT2907AWT1的Datasheet PDF文件第2页  
FM120-M
THRU
MMBT2907AWT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistor
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
SOT-323
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
.087(2.20)
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.070(1.80)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
Mechanical data
.054(1.35)
.045(1.15)
ry
0.031(0.8) Typ.
.096(2.45)
.078(2.00)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
.056(1.40)
Weight : Approximated 0.011 gram
 
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum RMS Voltage
Pr
el
12
20
14
13
30
21
im
V
RRM
V
RMS
V
DC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.047(1.20)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
ina
14
40
28
40
15
50
35
50
16
60
42
60
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
 
18
80
56
80
1.0
 
30
40
120
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
O
.016(0.40)
 
.008(0.20)
I
FSM
R
ΘJA
T
J
.043(1.10)
.032(0.80)
20
30
 
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
-55 to +125
 
C
J
Dimensions in inches
 
and (millimeters)
TSTG
 
-55 to +150
℃/W
PF
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
0.025
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.025
V
F
0.65
I
R
0.50
0.65
0.70
0.5
10
0.85
0.9
0.92
 
Volts
@T A=125℃
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.075
1.9
 
 
0.035
0.9
0.028
0.7
inches
mm
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.